发明申请
- 专利标题： FinFET with Rounded Source/Drain Profile
- 专利标题（中）： FinFET具有圆形源/排水廓线
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申请号： US13792475申请日： 2013-03-11
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公开(公告)号： US20140252489A1公开(公告)日： 2014-09-11
- 发明人: Ming-Hua Yu , Chih-Pin Tsao , Pei-Ren Jeng , Tze-Liang Lee
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
A method of forming a FinFET with a rounded source/drain profile comprises forming a fin in a substrate, etching a source/drain recess in the fin, forming a plurality of source/drain layers in the source/drain recess; and etching at least one of the plurality of source/drain layers. The source/drain layers may be a silicon germanium compound. Etching at the source/drain layers may comprises partially etching each of the plurality of source/drain layers prior to forming subsequent layers of the plurality of source/drain layers. The source/drain layers may be formed with a thickness at a top corner of about 15 nm, and the source/drain layers may each be etched back by about 3 nm prior to forming subsequent layers of the plurality of source/drain layers. Forming the plurality of source/drain layers optionally comprises forming at least five source/drain layers.
公开/授权文献
- US09831345B2 FinFET with rounded source/drain profile 公开/授权日：2017-11-28
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