发明申请
- 专利标题： PATTERNING PROCESS AND RESIST COMPOSITION
- 专利标题（中）： 绘图工艺和耐腐蚀组合物
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申请号： US14182682申请日： 2014-02-18
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公开(公告)号： US20140255843A1公开(公告)日： 2014-09-11
- 发明人: Tomohiro Kobayashi , Kazuhiro Katayama , Kentaro Kumaki , Chuanwen Lin , Masaki Ohashi , Masahiro Fukushima
- 申请人： SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2013-042709 20130305
- 主分类号： G03F7/30
- IPC分类号： G03F7/30 ; G03F7/038
摘要：
A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R1—COOC(CF3)2—CH2SO3−R2R3R4S+ wherein R1 is a monovalent hydrocarbon group, R2, R3 and R4 are an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.
公开/授权文献
- US09519213B2 Patterning process and resist composition 公开/授权日：2016-12-13
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