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公开(公告)号：US12164227B2
公开(公告)日：2024-12-10
申请号：US17591719
申请日：2022-02-03
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Keiichi Masunaga , Satoshi Watanabe , Masaaki Kotake , Masaki Ohashi
Abstract: A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.
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公开(公告)号：US20230137472A1
公开(公告)日：2023-05-04
申请号：US17945259
申请日：2022-09-15
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masaki Ohashi , Masahiro Fukushima , Kazuhiro Katayama
Abstract: A chemically amplified resist composition comprising a base polymer and a quencher in the form of an amine compound of specific structure is provided. The resist composition has a high sensitivity and forms a pattern with a high resolution and improved LWR, independent of whether it is of positive or negative tone.
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公开(公告)号：US11560355B2
公开(公告)日：2023-01-24
申请号：US16743295
申请日：2020-01-15
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masahiro Fukushima , Masaki Ohashi , Kazuhiro Katayama
IPC: C07C381/12 , G03F7/004 , G03F7/039 , C07D307/77 , G03F7/32 , G03F7/20 , G03F7/038
Abstract: A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR.
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公开(公告)号：US11506977B2
公开(公告)日：2022-11-22
申请号：US16865609
申请日：2020-05-04
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Jun Hatakeyama , Masaki Ohashi , Takayuki Fujiwara
IPC: G03F7/039 , C08F220/34 , C08F220/38 , C08F8/44 , C08F220/04 , G03F7/16 , G03F7/20 , G03F7/30
Abstract: A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of N-carbonylsulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.
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公开(公告)号：US11448961B2
公开(公告)日：2022-09-20
申请号：US16561456
申请日：2019-09-05
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Takayuki Fujiwara , Masaki Ohashi , Kazuhiro Katayama , Kenji Yamada
IPC: G03F7/004 , C07C59/115 , G03F7/039 , G03F7/038 , C07D207/27 , C07C43/225 , C08F220/16 , C08F220/28 , C08F212/14 , C09D133/08 , C09D133/14 , C09D125/14 , C07C25/18 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32
Abstract: A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.
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Patent Agency Ranking
公开(公告)号：US20220276557A1
公开(公告)日：2022-09-01
申请号：US17591719
申请日：2022-02-03
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Keiichi Masunaga , Satoshi Watanabe , Masaaki Kotake , Masaki Ohashi
Abstract: A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.
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公开(公告)号：US20220269174A1
公开(公告)日：2022-08-25
申请号：US17591741
申请日：2022-02-03
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masaaki Kotake , Satoshi Watanabe , Keiichi Masunaga , Masaki Ohashi
Abstract: A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or Selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.
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公开(公告)号：US20220100089A1
公开(公告)日：2022-03-31
申请号：US17484333
申请日：2021-09-24
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masaki Ohashi , Kazuhiro Katayama , Masahiro Fukushima , Shun Kikuchi
IPC: G03F7/004 , C07C381/12 , C07C309/71 , C07C59/84
Abstract: A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography.
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公开(公告)号：US11269251B2
公开(公告)日：2022-03-08
申请号：US16142918
申请日：2018-09-26
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Jun Hatakeyama , Masaki Ohashi
Abstract: A resist composition comprising a base polymer and a sulfonium salt of thiophenecarboxylic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
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公开(公告)号：US11262653B2
公开(公告)日：2022-03-01
申请号：US16042179
申请日：2018-07-23
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor： Masaki Ohashi , Jun Hatakeyama , Teppei Adachi
IPC: G03F7/039 , C08L41/00 , C07C381/12 , C07C309/12 , G03F7/004 , C08F228/02 , G03F7/11 , G03F7/20 , C08F20/38 , C07D327/06 , C08F12/14 , C08F12/22
Abstract: A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.
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