发明申请
- 专利标题： Strained InGaAs Quantum Wells for Complementary Transistors
- 专利标题（中）： 应变InGaAs量子阱互补晶体管
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申请号： US14156592申请日： 2014-01-16
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公开(公告)号： US20140264278A1公开(公告)日： 2014-09-18
- 发明人: Brian R. Bennett , John Bradley Boos , Theresa F. Chick , James G. Champlain
- 申请人： Brian R. Bennett , John Bradley Boos , Theresa F. Chick , James G. Champlain
- 申请人地址： US VA Arlington
- 专利权人： The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US VA Arlington
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/778
摘要：
An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.
公开/授权文献
- US08884265B2 Strained InGaAs quantum wells for complementary transistors 公开/授权日：2014-11-11
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