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    Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices
    5.
    发明申请
    Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices 审中-公开
    低功耗电子器件的低电阻率p型GaSb量子阱

    公开(公告)号：US20140339501A1

    公开(公告)日：2014-11-20

    申请号：US13895388

    申请日：2013-05-16

    申请人： Brian R. Bennett ,  Theresa F. Chick ,  Mario G. Ancona ,  John Bradley Boos

    发明人： Brian R. Bennett ,  Theresa F. Chick ,  Mario G. Ancona ,  John Bradley Boos

    IPC分类号： H01L29/12

    CPC分类号： H01L29/122 ,  H01L29/201 ,  H01L29/7783

    摘要： A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InwAl1−wAs on a semi-insulating (100) InP substrate, where the InwAl1−wAs is lattice matched to InP, followed by an AlAsxSb1−x buffer layer on the InwAl1−wAs layer, an AlAsxSb1−x spacer layer on the buffer layer, a GaSb quantum well layer on the spacer layer, an AlAsxSb1−x barrier layer on the quantum well layer, an InyAl1−ySb layer on the barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

    摘要翻译： 提供包括具有至少一个低电阻率p型GaSb量子阱的异质结构的半导体器件。 异质结构包括在半绝缘（100）InP衬底上的InwAl1-wAs层，其中InwAl1-wAs与InP晶格匹配，随后是InwAl1-wAs层上的AlAsxSb1-x缓冲层，AlAsxSb1-x 缓冲层上的间隔层，间隔层上的GaSb量子阱层，量子阱层上的AlAs x Sb 1-x势垒层，势垒层上的In y Al 1-y Sb层和InAs帽。 半导体器件适用于诸如场效应晶体管的低功率电子器件。

    Low-resistivity p-type GaSb quantum wells
    6.
    发明授权
    Low-resistivity p-type GaSb quantum wells 有权
    低电阻率p型GaSb量子阱

    公开(公告)号：US09006708B2

    公开(公告)日：2015-04-14

    申请号：US13895387

    申请日：2013-05-16

    申请人： Brian R. Bennett ,  Theresa F. Chick ,  Mario G. Ancona ,  John Bradley Boos

    发明人： Brian R. Bennett ,  Theresa F. Chick ,  Mario G. Ancona ,  John Bradley Boos

    IPC分类号： H01L29/12 ,  H01L29/205 ,  H01L29/778

    CPC分类号： H01L29/122 ,  H01L29/201 ,  H01L29/205 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7785

    摘要： A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

    摘要翻译： 提供包括具有至少一个低电阻率p型GaSb量子阱的异质结构的半导体器件。 异质结构包括InP衬底上的In0.52Al0.48As层，其中In0.52Al0.48As与InP晶格匹配，随后是In0.52Al0.48As层上的AlAsxSb1-x缓冲层，AlAsxSb1-x AlAsxSb1-x缓冲层上的间隔层，AlAsxSb1-x间隔层上的GaSb量子阱层，GaSb量子阱层上的AlAs x Sb 1-x势垒层，AlAs x Sb 1-x间隔层上的In 0.2 Al 0.8 Sb蚀刻停止层， x阻挡层和InAs帽。 半导体器件适用于诸如场效应晶体管的低功率电子器件。

    Low-Resistivity p-Type GaSb Quantum Wells
    7.
    发明申请
    Low-Resistivity p-Type GaSb Quantum Wells 有权
    低电阻率p型GaSb量子阱

    公开(公告)号：US20140217363A1

    公开(公告)日：2014-08-07

    申请号：US13895387

    申请日：2013-05-16

    申请人： Brian R. Bennett ,  Theresa F. Chick ,  Mario G. Ancona ,  John Bradley Boos

    发明人： Brian R. Bennett ,  Theresa F. Chick ,  Mario G. Ancona ,  John Bradley Boos

    IPC分类号： H01L29/06

    CPC分类号： H01L29/122 ,  H01L29/201 ,  H01L29/205 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7785

    摘要： A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

    摘要翻译： 提供包括具有至少一个低电阻率p型GaSb量子阱的异质结构的半导体器件。 异质结构包括InP衬底上的In0.52Al0.48As层，其中In0.52Al0.48As与InP晶格匹配，随后是In0.52Al0.48As层上的AlAsxSb1-x缓冲层，AlAsxSb1-x AlAsxSb1-x缓冲层上的间隔层，AlAsxSb1-x间隔层上的GaSb量子阱层，GaSb量子阱层上的AlAs x Sb 1-x势垒层，AlAs x Sb 1-x间隔层上的In 0.2 Al 0.8 Sb蚀刻停止层， x阻挡层和InAs帽。 半导体器件适用于诸如场效应晶体管的低功率电子器件。

    n- and p-Channel Field Effect Transistors with Single Quantum Well for Complementary Circuits
    8.
    发明申请
    n- and p-Channel Field Effect Transistors with Single Quantum Well for Complementary Circuits 有权
    具有单量子阱的n沟道场效应晶体管和p沟道场效应晶体管用于互补电路

    公开(公告)号：US20130149845A1

    公开(公告)日：2013-06-13

    申请号：US13756566

    申请日：2013-02-01

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits
    9.
    发明申请
    N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits 有权
    具有单量子阱的N沟道场效应晶体管和P沟道场效应晶体管用于互补电路

    公开(公告)号：US20110297916A1

    公开(公告)日：2011-12-08

    申请号：US13115453

    申请日：2011-05-25

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    n- and p-channel field effect transistors with single quantum well for complementary circuits
    10.
    发明授权
    n- and p-channel field effect transistors with single quantum well for complementary circuits 有权
    具有用于互补电路的单量子阱的n沟道场效应晶体管和p沟道场效应晶体管

    公开(公告)号：US08652959B2

    公开(公告)日：2014-02-18

    申请号：US13756566

    申请日：2013-02-01

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L21/28

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。