发明申请
- 专利标题: DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, AND COMPONENT FOR SEMICONDUCTOR PRODUCTION EQUIPMENT
- 专利标题(中): DENSE复合材料及其制造方法以及半导体生产设备的组件
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申请号: US14190531申请日: 2014-02-26
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公开(公告)号: US20140272378A1公开(公告)日: 2014-09-18
- 发明人: Asumi JINDO , Katsuhiro INOUE , Yuji KATSUDA
- 申请人: NGK Insulators, Ltd.
- 申请人地址: JP Nagoya-City
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya-City
- 优先权: JP2013-052866 20130315
- 主分类号: C04B35/565
- IPC分类号: C04B35/565 ; C04B35/645
摘要:
A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.
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