发明申请
US20140272378A1 DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, AND COMPONENT FOR SEMICONDUCTOR PRODUCTION EQUIPMENT 有权
DENSE复合材料及其制造方法以及半导体生产设备的组件

  • 专利标题: DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, AND COMPONENT FOR SEMICONDUCTOR PRODUCTION EQUIPMENT
  • 专利标题(中): DENSE复合材料及其制造方法以及半导体生产设备的组件
  • 申请号: US14190531
    申请日: 2014-02-26
  • 公开(公告)号: US20140272378A1
    公开(公告)日: 2014-09-18
  • 发明人: Asumi JINDOKatsuhiro INOUEYuji KATSUDA
  • 申请人: NGK Insulators, Ltd.
  • 申请人地址: JP Nagoya-City
  • 专利权人: NGK Insulators, Ltd.
  • 当前专利权人: NGK Insulators, Ltd.
  • 当前专利权人地址: JP Nagoya-City
  • 优先权: JP2013-052866 20130315
  • 主分类号: C04B35/565
  • IPC分类号: C04B35/565 C04B35/645
DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, AND COMPONENT FOR SEMICONDUCTOR PRODUCTION EQUIPMENT
摘要:
A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.
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