发明申请
- 专利标题: OVER-CURRENT PROTECTION DEVICE
- 专利标题(中): 过流保护装置
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申请号: US14186224申请日: 2014-02-21
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公开(公告)号: US20140285938A1公开(公告)日: 2014-09-25
- 发明人: Chun Teng Tseng , Cheng Hsiang Chen , Pin Syuan Li , Chi Jen Su
- 申请人: Chun Teng Tseng , Cheng Hsiang Chen , Pin Syuan Li , Chi Jen Su
- 申请人地址: TW Hsinchu Science Park
- 专利权人: POLYTRONICS TECHNOLOGY CORP.
- 当前专利权人: POLYTRONICS TECHNOLOGY CORP.
- 当前专利权人地址: TW Hsinchu Science Park
- 优先权: TW102110139 20130322
- 主分类号: H02H9/02
- IPC分类号: H02H9/02
摘要:
An over-current protection device comprises a PTC device, first and second electrodes, a first welding metal plate and a second welding metal plate. The PTC device comprises a first conductive layer, at second conductive layer and a PTC polymeric material layer laminated therebetween. The first electrode electrically connects to the first conductive layer. The second electrode electrically connects to the second conductive layer and is separated from the first electrode. The first welding metal plate is formed on an upper surface of the device and connects to the first electrode. The second welding metal plate is formed on the upper surface or a lower surface of the device and connects to the second electrode. The first and second welding metal plates are placed at two opposite ends of the strip-like structure, and each of them has a thickness sufficient to withstand spot-welding without significant resultant damage to the PTC device.
公开/授权文献
- US09401234B2 Over-current protection device 公开/授权日:2016-07-26
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