发明申请
- 专利标题： ANTI-FUSE STRUCTURE AND PROGRAMMING METHOD THEREOF
- 专利标题（中）： 防冻结构及其编程方法
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申请号： US13854142申请日： 2013-04-01
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公开(公告)号： US20140291801A1公开(公告)日： 2014-10-02
- 发明人: Chu-Fu Lin , Chien-Li Kuo , Ching-Li Yang
- 申请人： United Microelectronics CORP.
- 主分类号： H01L23/525
- IPC分类号： H01L23/525 ; H01L23/00
摘要：
A method of programming an anti-fuse includes steps as follows. First, an insulating layer is provided. An anti-fuse region is defined on the insulating layer. An anti-fuse is embedded within the anti-fuse region of the insulating layer. The anti-fuse includes at least a first conductor and a second conductor. Then, part of the insulating layer is removed by a laser to form an anti-fuse opening in the insulating layer. Part of the first conductor and part of the second conductor are exposed through the anti-fuse opening. After that, a under bump metallurgy layer is formed in the anti-fuse opening to connect the first conductor and the second conductor electrically.
公开/授权文献
- US08884398B2 Anti-fuse structure and programming method thereof 公开/授权日：2014-11-11
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