发明申请
- 专利标题： SILICON-CONTROLLED-RECTIFIER WITH ADJUSTABLE HOLDING VOLTAGE
- 专利标题（中）： 具有可调节保持电压的硅控制整流器
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申请号： US14309660申请日： 2014-06-19
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公开(公告)号： US20140299912A1公开(公告)日： 2014-10-09
- 发明人: Kun-Hsien LIN , Che-Hao CHUANG , Ryan Hsin-Chin JIANG
- 申请人： Amazing Microelectronic Corp.
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
摘要：
In a silicon-controlled-rectifier (SCR) with adjustable holding voltage, an epitaxial layer is formed on a heavily doped semiconductor layer. A first N-well having a first P-heavily doped area is formed in the epitaxial layer. A first P-well is formed in the epitaxial layer. Besides, a first N-heavily doped area is formed in the first P-well. At least one deep isolation trench is formed in the epitaxial layer, having a depth greater than the depth of the first N-type well and located between the first P-heavily doped area and the first N-heavily doped area. A distance between the deep isolation trench and the heavily doped semiconductor layer is larger than zero.
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