发明申请
- 专利标题： WRITE CURRENT REDUCTION IN SPIN TRANSFER TORQUE MEMORY DEVICES
- 专利标题（中）： 旋转转矩记忆装置中的写入电流减小
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申请号： US14312125申请日： 2014-06-23
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公开(公告)号： US20140299953A1公开(公告)日： 2014-10-09
- 发明人: Brian S. Doyle , David L. Kencke , Charles C. Kuo , Dmitri E. Nikonov , Robert S. Chau
- 申请人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Dmitri E. Nikonov , Robert S. Chau
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/02
摘要：
The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.