发明申请
US20140311892A1 REACTIVE SPUTTERING PROCESS 审中-公开
反应溅射法

  • 专利标题: REACTIVE SPUTTERING PROCESS
  • 专利标题(中): 反应溅射法
  • 申请号: US14362758
    申请日: 2012-11-23
  • 公开(公告)号: US20140311892A1
    公开(公告)日: 2014-10-23
  • 发明人: Siegfried Krassnitzer
  • 申请人: Oerlikon Trading AG, Trubbach
  • 国际申请: PCT/EP2012/004848 WO 20121123
  • 主分类号: C23C14/34
  • IPC分类号: C23C14/34
REACTIVE SPUTTERING PROCESS
摘要:
Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material transitioning to the gas phase is ionized. Reactive gas flow is established and reacts with the material of the target surface. Voltage pulse duration is such that, during the pulse, the target surface where the current flows is at least partly covered most of the time with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.
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