发明申请
- 专利标题： Semiconductor Devices and Methods of Manufacture Thereof
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US14322298申请日： 2014-07-02
-
公开(公告)号： US20140312431A1公开(公告)日： 2014-10-23
- 发明人: Ji-Yin Tsai , Yao-Tsung Huang , Chih-Hsin Ko , Clement Wann
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region. The source or drain region includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide. The source or drain region also includes a channel-stressing material layer comprising SiCP or SiCAs.
公开/授权文献
- US08866188B1 Semiconductor devices and methods of manufacture thereof 公开/授权日：2014-10-21
信息查询
IPC分类:
