发明申请
US20140319606A1 SHIELDED GATE TRENCH (SGT) MOSFET DEVICES AND MANUFACTURING PROCESSES
有权
SHIELDED GATE TRENCH（SGT）MOSFET器件和制造工艺
- 专利标题： SHIELDED GATE TRENCH (SGT) MOSFET DEVICES AND MANUFACTURING PROCESSES
- 专利标题（中）： SHIELDED GATE TRENCH（SGT）MOSFET器件和制造工艺
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申请号： US13870993申请日： 2013-04-26
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公开(公告)号： US20140319606A1公开(公告)日： 2014-10-30
- 发明人: Anup Bhalla , Sik K. Lui
- 申请人： Anup Bhalla , Sik K. Lui
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/78
摘要：
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells constituting an active cell has a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding the cell. The trenched gate further has a bottom-shielding electrode filled with a gate material disposed below and insulated from the trenched gate. At least one of the cells constituting a source-contacting cell surrounded by the trench with a portion functioning as a source connecting trench is filled with the gate material for electrically connecting between the bottom-shielding electrode and a source metal disposed directly on top of the source connecting trench. The semiconductor power device further includes an insulation protective layer disposed on top of the semiconductor power device having a plurality of source openings on top of the source region and the source connecting trench provided for electrically connecting to the source metal and at least a gate opening provided for electrically connecting the gate pad to the trenched gate.
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