公开(公告)号：US10896968B2

公开(公告)日：2021-01-19

申请号：US15499487

申请日：2017-04-27

申请人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K. Lui

发明人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K. Lui

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L29/40

摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

公开(公告)号：US09024378B2

公开(公告)日：2015-05-05

申请号：US13763644

申请日：2013-02-09

申请人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K Lui

发明人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K Lui

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L29/66

CPC分类号： H01L29/7827 ,  H01L21/265 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813

摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

摘要翻译： 本发明公开了一种半导体功率器件。 沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。 所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域 从而可以减少用于制造半导体功率器件的掩模。

公开(公告)号：US20140319606A1

公开(公告)日：2014-10-30

申请号：US13870993

申请日：2013-04-26

申请人： Anup Bhalla ,  Sik K. Lui

发明人： Anup Bhalla ,  Sik K. Lui

IPC分类号： H01L29/423 ,  H01L29/78

CPC分类号： H01L29/407 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813

摘要： This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells constituting an active cell has a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding the cell. The trenched gate further has a bottom-shielding electrode filled with a gate material disposed below and insulated from the trenched gate. At least one of the cells constituting a source-contacting cell surrounded by the trench with a portion functioning as a source connecting trench is filled with the gate material for electrically connecting between the bottom-shielding electrode and a source metal disposed directly on top of the source connecting trench. The semiconductor power device further includes an insulation protective layer disposed on top of the semiconductor power device having a plurality of source openings on top of the source region and the source connecting trench provided for electrically connecting to the source metal and at least a gate opening provided for electrically connecting the gate pad to the trenched gate.

摘要翻译： 本发明公开了一种半导体功率器件，其包括由在半导体衬底中开口的沟槽围绕的多个功率晶体管单元。 构成活性单元的单元中的至少一个具有与沟槽栅极相邻设置的源极区域，该沟槽栅极电连接到栅极焊盘并围绕电池。 沟槽栅极还具有填充有栅极材料的底部屏蔽电极，栅极材料设置在沟槽栅极下方并与沟槽栅极绝缘。 构成由沟槽围绕的源极接触单元中的至少一个具有用作源极连接沟槽的部分的单元填充有栅极材料，用于电连接底部屏蔽电极和直接设置在源极连接沟槽顶部的源极金属 源连接沟槽。 半导体功率器件还包括设置在半导体功率器件的顶部上的绝缘保护层，其具有在源极区域的顶部上的多个源极开口和设置用于电连接到源极金属的源极连接沟槽和至少提供的栅极开口 用于将栅极焊盘电连接到沟槽栅极。

公开(公告)号：US20140225187A1

公开(公告)日：2014-08-14

申请号：US13763644

申请日：2013-02-09

申请人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K. Lui

发明人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K. Lui

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/265

CPC分类号： H01L29/7827 ,  H01L21/265 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813

摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

摘要翻译： 本发明公开了一种半导体功率器件。 沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。 所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域 从而可以减少用于制造半导体功率器件的掩模。

公开(公告)号：US20130093001A1

公开(公告)日：2013-04-18

申请号：US13436192

申请日：2012-03-30

申请人： Anup Bhalla ,  Daniel Ng ,  Tiesheng Li ,  Sik K. Lui

发明人： Anup Bhalla ,  Daniel Ng ,  Tiesheng Li ,  Sik K. Lui

IPC分类号： H01L29/78

CPC分类号： H01L29/66712 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7827

摘要： This invention discloses a new switching device that includes a drain disposed on a first surface and a source region disposed near a second surface of a semiconductor opposite the first surface. An insulated gate electrode is disposed on top of the second surface for controlling a source to drain current and a source electrode is interposed into the insulated gate electrode for substantially preventing a coupling of an electrical field between the gate electrode and an epitaxial region underneath the insulated gate electrode. The source electrode further covers and extends over the insulated gate for covering an area on the second surface of the semiconductor to contact the source region, An epitaxial layer is disposed above and having a different dopant concentration than the drain region. The gate electrode is insulated from the source electrode by an insulation layer having a thickness depending on a Vgsmax rating of the vertical power device.

摘要翻译： 本发明公开了一种新的开关装置，其包括设置在第一表面上的漏极和设置在与第一表面相对的半导体的第二表面附近的源极区域。 绝缘栅电极设置在第二表面的顶部，用于控制源极到漏极电流，并且源电极插入到绝缘栅电极中，用于基本上防止栅极电极和绝缘栅极之间的外延区域之间的电场的耦合 栅电极。 源极电极进一步覆盖并延伸在绝缘栅上，用于覆盖半导体的第二表面上的区域以接触源极区。外延层设置在漏极区之上并且具有不同掺杂剂浓度。 栅极通过具有取决于垂直功率器件的Vgsmax额定值的厚度的绝缘层与源电极绝缘。

公开(公告)号：US08357973B2

公开(公告)日：2013-01-22

申请号：US13199382

申请日：2011-08-25

申请人： Sik K Lui ,  François Hébert ,  Anup Bhalla

发明人： Sik K Lui ,  François Hébert ,  Anup Bhalla

IPC分类号： H01L29/66

CPC分类号： H01L29/781 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.

摘要翻译： 本发明公开了底源横向扩散MOS（BS-LDMOS）器件。 器件具有在半导体衬底的顶表面附近的漏区附近设置的源极区域，该半导体衬底在源极区域和漏极区域之间支撑栅极。 BS-LDMOS器件还具有一个组合的沉降通道区域，该半导体衬底的深度完全位于靠近顶表面的源极区域附近设置的体区域之下，其中组合沉降通道区域用作掩埋源体 用于将主体区域和源区域电连接到用作源电极的衬底的底部。 漂移区域设置在栅极下方的顶表面附近并且远离源极区域并且延伸到并包围漏极区域。 在漂移区域下方延伸的组合沉降通道区域和具有与掺杂剂 - 导电性相反并补偿漂移区域以减少源极 - 漏极电容的组合沉降沟道区域。

公开(公告)号：US20120025301A1

公开(公告)日：2012-02-02

申请号：US13199382

申请日：2011-08-25

申请人： Sik K. Lui ,  François Hébert ,  Anup Bhalla

发明人： Sik K. Lui ,  François Hébert ,  Anup Bhalla

IPC分类号： H01L29/78 ,  H01L21/8234

CPC分类号： H01L29/781 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.

摘要翻译： 本发明公开了底源横向扩散MOS（BS-LDMOS）器件。 器件具有在半导体衬底的顶表面附近的漏区附近设置的源极区域，该半导体衬底在源极区域和漏极区域之间支撑栅极。 BS-LDMOS器件还具有一个组合的沉陷通道区域，该半导体衬底的深度完全位于靠近顶表面的源极区域附近设置的体区域之下，其中组合沉降通道区域用作掩埋源体 用于将主体区域和源区域电连接到用作源电极的衬底的底部。 漂移区域设置在栅极下方的顶表面附近并且远离源极区域并且延伸到并包围漏极区域。 在漂移区域下方延伸的组合沉降通道区域和具有与掺杂剂 - 导电性相反并补偿漂移区域以减少源极 - 漏极电容的组合沉降沟道区域。

公开(公告)号：US08067822B2

公开(公告)日：2011-11-29

申请号：US12215049

申请日：2008-06-23

申请人： Leeshawn Luo ,  Anup Bhalla ,  Yueh-Se Ho ,  Sik K. Lui ,  Mike Chang

发明人： Leeshawn Luo ,  Anup Bhalla ,  Yueh-Se Ho ,  Sik K. Lui ,  Mike Chang

IPC分类号： H01L23/52 ,  H01L23/485 ,  H01L23/495

CPC分类号： H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/50 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor integrated circuit package having a leadframe (108) that includes a leadframe pad (103a) disposed under a die (100) and a bonding metal area (101a) that is disposed over at least two adjacent sides of the die. The increase in the bonding metal area (101a) increases the number of interconnections between the metal area (101a) and the die (100) to reduce the electric resistance and inductance. Furthermore, the surface area of the external terminals radiating from the package's plastic body (106) is increased if not maximized so that heat can be dissipated quicker and external terminal resistances reduced. The integrated circuit is applicable for MOSFET devices and the bonding metal area (101a) is used for the source terminal (101). The bonding metal area may have a “L” shape, a “C” shape, a “J” shape, an “I” shape or any combination thereof.

摘要翻译： 一种半导体集成电路封装，具有引线框架（108），该引线框架（108）包括设置在管芯（100）下方的引线框架（103a）和设置在管芯的至少两个相邻侧面上的接合金属区域（101a）。 接合金属区域（101a）的增加增加了金属区域（101a）和模具（100）之间的互连次数，以降低电阻和电感。 此外，从封装的塑料体（106）辐射的外部端子的表面积如果没有最大化则增加，使得能够更快地消散热量并且降低外部端子电阻。 集成电路适用于MOSFET器件，并且用于源极端子（101）的接合金属区域（101a）。 接合金属区域可以具有“L”形，“C”形，“J”形，“I”形或其任何组合。

公开(公告)号：US08035159B2

公开(公告)日：2011-10-11

申请号：US11796985

申请日：2007-04-30

申请人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K Lui

发明人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K Lui

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811

摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

摘要翻译： 本发明公开了一种半导体功率器件。 沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。 所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域 从而可以减少用于制造半导体功率器件的掩模。

公开(公告)号：US20100330767A1

公开(公告)日：2010-12-30

申请号：US12806746

申请日：2010-08-21

申请人： Sik K. Lui ,  Anup Bhalla

发明人： Sik K. Lui ,  Anup Bhalla

IPC分类号： H01L21/8234

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/7803 ,  H01L29/945 ,  H01L2223/6644 ,  H03K17/165

摘要： This invention discloses a new trenched vertical semiconductor power device that includes a capacitor formed between a conductive layer covering over an inter-dielectric layer disposed on top of a trenched gate. In a specific embodiment, the trenched vertical semiconductor power device may be a trenched metal oxide semiconductor field effect transistor (MOSFET) power device. The trenched gate is a trenched polysilicon gate and the conductive layer is a second polysilicon layer covering an inter-poly dielectric layer disposed on top of the trenched polysilicon gate. The conductive layer is further connected to a source of the vertical power device.