发明申请
- 专利标题： Method for Patterned Doping of a Semiconductor
- 专利标题（中）： 半导体图案掺杂的方法
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申请号： US14260514申请日： 2014-04-24
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公开(公告)号： US20140322906A1公开(公告)日： 2014-10-30
- 发明人: David H. Levy , Daniele Margadonna , Dennis Flood , Wendy G. Ahearn , Richard W. Topel, JR. , Theodore Zubil
- 申请人： David H. Levy , Daniele Margadonna , Dennis Flood , Wendy G. Ahearn , Richard W. Topel, JR. , Theodore Zubil
- 申请人地址： US NJ Red Bank
- 专利权人： Natcore Technology, Inc.
- 当前专利权人： Natcore Technology, Inc.
- 当前专利权人地址： US NJ Red Bank
- 主分类号： H01L21/223
- IPC分类号： H01L21/223 ; H01L31/18
摘要：
A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of the barrier layer is defined by the polymeric material. The method further comprises removing the polymeric material, and doping the substrate. The barrier layer substantially prevents or reduces doping of the substrate to allow patterned doping regions to be formed on the substrate. The method can be repeated to allow additional doping regions to be formed on the substrate.
公开/授权文献
- US09449824B2 Method for patterned doping of a semiconductor 公开/授权日：2016-09-20