LASER PROCESSED BACK CONTACT HETEROJUNCTION SOLAR CELLS
    5.
    发明申请
    LASER PROCESSED BACK CONTACT HETEROJUNCTION SOLAR CELLS 有权
    激光加工接触异质太阳能电池

    公开(公告)号:US20160268455A1

    公开(公告)日:2016-09-15

    申请号:US15068900

    申请日:2016-03-14

    摘要: An interdigitated solar cell may provide a heterojunction or tunnel junction emitter and base contacts that comprise laser processed regions that electrically couple the base contact to a substrate. Methods for manufacturing such solar cells to provide interdigitated back contacts may utilize laser processing to form laser processed regions that are isolated from the emitter. Laser processing may include laser-doping, laser-firing, laser-transfer, laser-transfer doping, laser contacting, and/or gas immersion laser doping.

    摘要翻译: 交叉指向的太阳能电池可以提供异质结或隧道结发射体和基极触点,其包括将基极触点电耦合到基板的激光处理区域。 制造这种太阳能电池以提供交叉反向接触的方法可以利用激光处理来形成与发射极隔离的激光处理区域。 激光加工可以包括激光掺杂,激光烧制,激光转移,激光转移掺杂,激光接触和/或气浸激光掺杂。

    Solar Cells with Patterned Antireflective Surfaces
    6.
    发明申请
    Solar Cells with Patterned Antireflective Surfaces 有权
    带有图案抗反射表面的太阳能电池

    公开(公告)号:US20140322858A1

    公开(公告)日:2014-10-30

    申请号:US14260687

    申请日:2014-04-24

    IPC分类号: H01L31/18

    摘要: Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.

    摘要翻译: 用于生产纳米级织构的低反射率表面的系统和方法可用于制造太阳能电池。 可以在蚀刻工艺之前用抗蚀剂图案化衬底,其在衬底的表面上产生纳米尺度的纹理。 此外,可以对衬底进行掺杂剂扩散处理。 在掺杂剂扩散之前,衬底可以任选地进行液相沉积以沉积允许图案化掺杂的材料。 可以根据需要修改纳米尺度纹理蚀刻和掺杂剂扩散的顺序以产生纳米后发射体或预纳米发射体。

    Systems and methods for forming foil contact rear emitter solar cell

    公开(公告)号:US10290750B2

    公开(公告)日:2019-05-14

    申请号:US15248383

    申请日:2016-08-26

    摘要: A solar cell structure may provide a front surface that may include a front passivation layer and front anti-reflective layer. The solar cell structure may provide both contacts on a rear surface. In some cases, the rear surface may optionally provide passivation, doped, and/or transparent conductive oxide layers. The rear surface also provides a multilayer foil assembly (MFA). The MFA provides a first metal foil in electrical communication with doped regions of the rear surface of the substrate, such as base or emitter regions. The MFA may also provide a second metal foil that is spaced apart from the first metal foil by a dielectric layer. The first metal foil and/or the dielectric layer may include openings through the entirety of these layers, and these openings may be utilized to form laser fired contacts electrically coupled to the second metal foil, which is electrically isolated from the first metal foil. In some embodiments, it may be desirable for the second foil to provide openings as well, which can be utilized to form laser fired contacts for the first metal foil.

    EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON
    9.
    发明申请
    EMITTER DIFFUSION CONDITIONS FOR BLACK SILICON 有权
    黑硅发射极扩散条件

    公开(公告)号:US20150357506A1

    公开(公告)日:2015-12-10

    申请号:US14734256

    申请日:2015-06-09

    IPC分类号: H01L31/18

    摘要: In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

    摘要翻译: 在一些情况下,希望在制造太阳能电池时进行掺杂以提高效率。 掺杂剂扩散可以包括以下步骤:(a)初始温度斜坡,(b)掺杂剂蒸汽流,(c)驱入和(d)冷却。 然而,掺杂可能导致过度掺杂,例如在太阳能电池已经被纳米级纹理化以提供黑色硅的区域中,从而产生具有电荷载体过度复合的死区。 在本文讨论的系统和方法中,可以在两个不同的温度设定点进行掺杂剂蒸汽流和驱入步骤,以最小化或消除死区的形成。 在一些实施例中,掺杂剂蒸汽流可以在比驱入更低的温度设定点进行。

    METHOD OF CONTROLLING SILICON OXIDE FILM THICKNESS
    10.
    发明申请
    METHOD OF CONTROLLING SILICON OXIDE FILM THICKNESS 失效
    控制硅氧化膜厚度的方法

    公开(公告)号:US20120252228A1

    公开(公告)日:2012-10-04

    申请号:US13434088

    申请日:2012-03-29

    申请人: Yuanchang Zhang

    发明人: Yuanchang Zhang

    IPC分类号: H01L21/314

    摘要: A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain.

    摘要翻译: 可以在一个生长中实现用于在衬底的前表面和后表面上涂覆具有不同厚度的膜的衬底的沉积工艺。 膜沉积的厚度可以通过基板间的分离来控制。 在同一化学浴液中不同的衬底间隔距离会导致衬底上不同的膜厚度。 衬底可以被布置成在前表面和后表面之间具有不同的间隔距离,V形布置,或者放置在帘幕旁边,并且衬底和帘幕之间具有不同的间隔距离。