发明申请
- 专利标题： WIDE BANDGAP SEMICONDUCTOR DEVICE
- 专利标题（中）： 宽带半导体器件
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申请号： US14365152申请日： 2012-02-15
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公开(公告)号： US20140327019A1公开(公告)日： 2014-11-06
- 发明人: Akimasa Kinoshita , Noriyuki Iwamuro
- 申请人： Akimasa Kinoshita , Noriyuki Iwamuro
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人地址： JP Kawasaki-shi
- 国际申请： PCT/JP2012/053506 WO 20120215
- 主分类号： H01L29/47
- IPC分类号： H01L29/47 ; H01L29/872
摘要：
A wide bandgap semiconductor device includes a first conductive type high-concentration wide bandgap semiconductor substrate, a first conductive type low-concentration wide bandgap semiconductor deposited film which is formed on the semiconductor substrate, a metal film which is formed on the semiconductor deposited film so that a Schottoky interface region is formed between the metal film and the semiconductor deposited film, and a second conductive type region which is formed in a region of the semiconductor deposited film corresponding to a peripheral portion of the metal film, wherein the Schottoky interface region in the semiconductor deposited film is surrounded by the second conductive type region so that periodic island regions are formed in the Schottoky interface region.
公开/授权文献
- US09455326B2 Wide bandgap semiconductor device 公开/授权日：2016-09-27
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