发明申请
- 专利标题： COMBINATION-TYPE TRANSISTOR AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 组合型晶体管及其制造方法
-
申请号： US14361708申请日： 2012-05-15
-
公开(公告)号： US20140327083A1公开(公告)日： 2014-11-06
- 发明人: Jong Hoon Park , Chang Kun Park
- 申请人： Jong Hoon Park , Chang Kun Park
- 申请人地址： KR Seoul
- 专利权人： SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK
- 当前专利权人： SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK
- 当前专利权人地址： KR Seoul
- 优先权： KR10-2011-0126571 20111130
- 国际申请： PCT/KR2012/003814 WO 20120515
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/8228 ; H01L27/06
摘要：
Disclosed is a combination-type transistor including a first MOSFET that includes a gate, a first source formed on one side of the gate, and a first drain formed on the other side of the gate; a second MOSFET that includes the gate, a second drain formed on the one side of the gate, and a second source formed on the other side of the gate; a first BJT that is formed such that the first source of the first MOSFET is used as an emitter, the second drain of the second MOSFET is used as a collector, and the substrate is used as a base; and a second BJT that is formed such that the second source of the second MOSFET is used as an emitter, the first drain of the first MOSFET is used as a collector, and the substrate is used as a base.
公开/授权文献
信息查询
IPC分类:
