公开(公告)号：US09246206B2

公开(公告)日：2016-01-26

申请号：US13824012

申请日：2011-09-07

申请人： Jong Hoon Park ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Kun Park

IPC分类号： H01P5/12 ,  H01F19/00 ,  H01P5/10 ,  H01F17/00 ,  H01P5/04

CPC分类号： H01P5/12 ,  H01F17/0006 ,  H01F19/00 ,  H01P5/04 ,  H01P5/10

摘要： Provided is a transmission line transformer having increased signal efficiency. The transmission line transformer is formed on an integrated circuit (IC), wherein a first transmission line disposed in one direction. Second and third transmission lines have same length direction as the first transmission line and are spaced apart from each other in a lateral direction above or below the first transmission line. Accordingly, an area of the first transmission line and areas of the second and third transmission lines, which face each other, are increased, thereby improving a coupling factor. Also, since a secondary transmission line is divided into two regions and uses the second and third transmission lines that have narrower widths than the first transmission line, parasitic capacitance components generated between the first through third transmission lines and a semiconductor substrate may be decreased.

摘要翻译： 提供了具有增加的信号效率的传输线变压器。 传输线变压器形成在集成电路（IC）上，其中沿一个方向布置的第一传输线。 第二传输线和第三传输线具有与第一传输线相同的长度方向，并且在第一传输线上方或下方的横向方向彼此间隔开。 因此，第一传输线的面积和彼此相对的第二和第三传输线的面积增加，从而提高耦合系数。 此外，由于二次传输线被分成两个区域并且使用具有比第一传输线窄的宽度的第二和第三传输线，所以可以减少在第一至第三传输线和半导体衬底之间产生的寄生电容分量。

公开(公告)号：US09159628B2

公开(公告)日：2015-10-13

申请号：US14361708

申请日：2012-05-15

申请人： Jong Hoon Park ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Kun Park

IPC分类号： H01L21/8238 ,  H01L27/06 ,  H01L27/07 ,  H01L21/8228

CPC分类号： H01L21/8238 ,  H01L21/8228 ,  H01L27/0623 ,  H01L27/0705

摘要： Disclosed is a combination-type transistor including a first MOSFET that includes a gate, a first source formed on one side of the gate, and a first drain formed on the other side of the gate; a second MOSFET that includes the gate, a second drain formed on the one side of the gate, and a second source formed on the other side of the gate; a first BJT that is formed such that the first source of the first MOSFET is used as an emitter, the second drain of the second MOSFET is used as a collector, and the substrate is used as a base; and a second BJT that is formed such that the second source of the second MOSFET is used as an emitter, the first drain of the first MOSFET is used as a collector, and the substrate is used as a base.

摘要翻译： 公开了一种组合型晶体管，其包括：第一MOSFET，其包括栅极，形成在栅极一侧的第一源极和形成在栅极的另一侧上的第一漏极; 包括栅极的第二MOSFET，形成在栅极一侧的第二漏极和形成在栅极另一侧的第二源极; 第一BJT被形成为使得第一MOSFET的第一源用作发射极，第二MOSFET的第二漏极用作集电极，并且将衬底用作基极; 以及第二BJT，其被形成为使得第二MOSFET的第二源用作发射极，第一MOSFET的第一漏极用作集电极，并且将衬底用作基极。

公开(公告)号：US09130524B2

公开(公告)日：2015-09-08

申请号：US14347634

申请日：2011-11-07

申请人： Jong Hoon Park ,  Chang Hyun Lee ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Hyun Lee ,  Chang Kun Park

IPC分类号： H03F3/04 ,  H03G3/00 ,  H03F1/22 ,  H03F1/32 ,  H03F3/21 ,  H03F3/193 ,  H03F1/02 ,  H03F3/195

CPC分类号： H03G3/00 ,  H03F1/0266 ,  H03F1/223 ,  H03F1/3205 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/451 ,  H03F2203/21106 ,  H03F2203/21112 ,  H03F2203/21142

摘要： Disclosed is a linear amplifier which includes: a common source transistor with the gate connected with an input node; a first common gate transistor connected with the common source transistor in a cascode type, with the drain connected with an output node; and a second common gate transistor connected in parallel with the first common gate transistor, with the gate connected with the input node and the drain connected with the output node.

摘要翻译： 公开了一种线性放大器，其包括：公共源晶体管，其栅极与输入节点连接; 与共源共栅型公共源晶体管连接的第一公共栅极晶体管，漏极与输出节点连接; 以及与所述第一公共栅极晶体管并联连接的第二公共栅极晶体管，所述栅极与所述输入节点连接，所述漏极与所述输出节点连接。

公开(公告)号：US09019013B2

公开(公告)日：2015-04-28

申请号：US14008573

申请日：2011-10-13

申请人： Jong Hoon Park ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Kun Park

IPC分类号： H03F3/45 ,  H03F3/21

CPC分类号： H03F3/45179 ,  H03F3/21 ,  H03F3/45183 ,  H03F2203/45034 ,  H03F2203/45318 ,  H03F2203/45352 ,  H03F2203/45481 ,  H03F2203/45638

摘要： Provided is a power amplifier which includes: a first transistor and a second transistor each having a first end connected to a first power source supplying a first voltage and to which signals having a same size but opposite polarities are input; a third transistor and a fourth transistor having first ends respectively connected to the first ends of the first transistor and the second transistor; and a fifth transistor having a first end connected to second ends of the third and fourth transistors and controlling oscillation of the third or fourth transistor.

摘要翻译： 提供了一种功率放大器，其包括：第一晶体管和第二晶体管，每个具有连接到提供第一电压的第一电源的第一端，并且输入具有相同尺寸但相反极性的信号; 第三晶体管和第四晶体管，其第一端分别连接到第一晶体管和第二晶体管的第一端; 以及第五晶体管，其第一端连接到第三和第四晶体管的第二端并控制第三或第四晶体管的振荡。

公开(公告)号：US08760257B2

公开(公告)日：2014-06-24

申请号：US13880163

申请日：2011-09-07

申请人： Jong Hoon Park ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Kun Park

IPC分类号： H01F5/00

CPC分类号： H01F27/2852 ,  H01F19/04 ,  H01P5/04

摘要： Provided is a transmission line transformer, and more particularly, a transmission line transformer capable of decreasing a power loss caused by a parasitic resistance component of the transmission line transformer and improving a coupling factor by forming a primary transmission line and a secondary transmission line parallel to each other on an integrated circuit (IC) by using a highest layer metal line, and forming a lower layer metal line immediately below the highest layer metal line in addition to the highest layer metal line in a region where the primary transmission line and the secondary transmission line face each other, while forming the transmission line transformer used in a high frequency circuit via a semiconductor process.

摘要翻译： 提供了一种传输线变压器，更具体地，涉及一种传输线变压器，其能够降低由传输线变压器的寄生电阻分量引起的功率损耗，并且通过形成与第一传输线平行的第一传输线和二次传输线来提高耦合系数 通过使用最高层金属线在集成电路（IC）上彼此相互连接，并且在最高层金属线的正下方形成下层金属线，除了在主传输线和次级侧的区域中的最高层金属线之外 传输线彼此面对，同时通过半导体工艺形成用于高频电路的传输线变压器。

公开(公告)号：US20140232462A1

公开(公告)日：2014-08-21

申请号：US14008573

申请日：2011-10-13

申请人： Jong Hoon Park ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Kun Park

IPC分类号： H03F3/45 ,  H03F3/21

CPC分类号： H03F3/45179 ,  H03F3/21 ,  H03F3/45183 ,  H03F2203/45034 ,  H03F2203/45318 ,  H03F2203/45352 ,  H03F2203/45481 ,  H03F2203/45638

摘要： Provided is a power amplifier which includes: a first transistor and a second transistor each having a first end connected to a first power source supplying a first voltage and to which signals having a same size but opposite polarities are input; a third transistor and a fourth transistor having first ends respectively connected to the first ends of the first transistor and the second transistor; and a fifth transistor having a first end connected to second ends of the third and fourth transistors and controlling oscillation of the third or fourth transistor.

摘要翻译： 提供了一种功率放大器，其包括：第一晶体管和第二晶体管，每个具有连接到提供第一电压的第一电源的第一端，并且输入具有相同尺寸但相反极性的信号; 第三晶体管和第四晶体管，其第一端分别连接到第一晶体管和第二晶体管的第一端; 以及第五晶体管，其第一端连接到第三和第四晶体管的第二端并控制第三或第四晶体管的振荡。

公开(公告)号：US20140327083A1

公开(公告)日：2014-11-06

申请号：US14361708

申请日：2012-05-15

申请人： Jong Hoon Park ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Kun Park

IPC分类号： H01L21/8238 ,  H01L21/8228 ,  H01L27/06

CPC分类号： H01L21/8238 ,  H01L21/8228 ,  H01L27/0623 ,  H01L27/0705

摘要： Disclosed is a combination-type transistor including a first MOSFET that includes a gate, a first source formed on one side of the gate, and a first drain formed on the other side of the gate; a second MOSFET that includes the gate, a second drain formed on the one side of the gate, and a second source formed on the other side of the gate; a first BJT that is formed such that the first source of the first MOSFET is used as an emitter, the second drain of the second MOSFET is used as a collector, and the substrate is used as a base; and a second BJT that is formed such that the second source of the second MOSFET is used as an emitter, the first drain of the first MOSFET is used as a collector, and the substrate is used as a base.

摘要翻译： 公开了一种组合型晶体管，其包括：第一MOSFET，其包括栅极，形成在栅极一侧的第一源极和形成在栅极的另一侧上的第一漏极; 包括栅极的第二MOSFET，形成在栅极一侧的第二漏极和形成在栅极另一侧的第二源极; 第一BJT被形成为使得第一MOSFET的第一源用作发射极，第二MOSFET的第二漏极用作集电极，并且将衬底用作基极; 以及第二BJT，其被形成为使得第二MOSFET的第二源用作发射极，第一MOSFET的第一漏极用作集电极，并且将衬底用作基极。

公开(公告)号：US08717724B2

公开(公告)日：2014-05-06

申请号：US13881227

申请日：2011-10-13

申请人： Joon Young Park ,  Jong Hoon Park ,  Chang Kun Park

发明人： Joon Young Park ,  Jong Hoon Park ,  Chang Kun Park

IPC分类号： H02H9/00 ,  H02H3/22 ,  H01L29/73 ,  H01L27/02

CPC分类号： H01L27/0248 ,  H01L27/0255 ,  H01L29/861

摘要： Provided is an electrostatic discharge (ESD) protection diode that is formed on an input/output pad of an integrated circuit (IC), the ESD protection diode including: an N-type semiconductor that constitutes a first diode and is connected to a pad for a power supply voltage; a P-type semiconductor that constitutes the first diode and is connected to a signal line; an N-type semiconductor that constitutes a second diode and is connected to the signal line; a P-type semiconductor that constitutes the second diode and is connected to a pad for grounding; and a third diode that is formed by contacting the N-type semiconductor of the first diode and the P-type semiconductor of the second diode.

摘要翻译： 提供了形成在集成电路（IC）的输入/输出焊盘上的静电放电（ESD）保护二极管，ESD保护二极管包括：构成第一二极管的N型半导体，并连接到焊盘 电源电压; 构成第一二极管并连接到信号线的P型半导体; 构成第二二极管并连接到信号线的N型半导体; 构成第二二极管并连接到用于接地的焊盘的P型半导体; 以及通过使第一二极管的N型半导体与第二二极管的P型半导体接触而形成的第三二极管。

公开(公告)号：US20130207224A1

公开(公告)日：2013-08-15

申请号：US13881227

申请日：2011-10-13

申请人： Joon Young Park ,  Jong Hoon Park ,  Chang Kun Park

发明人： Joon Young Park ,  Jong Hoon Park ,  Chang Kun Park

IPC分类号： H01L27/02

CPC分类号： H01L27/0248 ,  H01L27/0255 ,  H01L29/861

摘要： Provided is an electrostatic discharge (ESD) protection diode that is formed on an input/output pad of an integrated circuit (IC), the ESD protection diode including: an N-type semiconductor that constitutes a first diode and is connected to a pad for a power supply voltage; a P-type semiconductor that constitutes the first diode and is connected to a signal line; an N-type semiconductor that constitutes a second diode and is connected to the signal line; a P-type semiconductor that constitutes the second diode and is connected to a pad for grounding; and a third diode that is formed by contacting the N-type semiconductor of the first diode and the P-type semiconductor of the second diode.

摘要翻译： 提供了形成在集成电路（IC）的输入/输出焊盘上的静电放电（ESD）保护二极管，ESD保护二极管包括：构成第一二极管的N型半导体，并连接到焊盘 电源电压; 构成第一二极管并连接到信号线的P型半导体; 构成第二二极管并连接到信号线的N型半导体; 构成第二二极管并连接到用于接地的焊盘的P型半导体; 以及通过使第一二极管的N型半导体与第二二极管的P型半导体接触而形成的第三二极管。

公开(公告)号：US20130187745A1

公开(公告)日：2013-07-25

申请号：US13824012

申请日：2011-09-07

申请人： Jong Hoon Park ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Kun Park

IPC分类号： H01F17/00

CPC分类号： H01P5/12 ,  H01F17/0006 ,  H01F19/00 ,  H01P5/04 ,  H01P5/10

摘要： Provided is a transmission line transformer having increased signal efficiency. The transmission line transformer is formed on an integrated circuit (IC), wherein a first transmission line disposed in one direction. Second and third transmission lines have same length direction as the first transmission line and are spaced apart from each other in a lateral direction above or below the first transmission line. Accordingly, an area of the first transmission line and areas of the second and third transmission lines, which face each other, are increased, thereby improving a coupling factor. Also, since a secondary transmission line is divided into two regions and uses the second and third transmission lines that have narrower widths than the first transmission line, parasitic capacitance components generated between the first through third transmission lines and a semiconductor substrate may be decreased.

摘要翻译： 提供了具有增加的信号效率的传输线变压器。 传输线变压器形成在集成电路（IC）上，其中沿一个方向布置的第一传输线。 第二传输线和第三传输线具有与第一传输线相同的长度方向，并且在第一传输线上方或下方的横向方向彼此间隔开。 因此，第一传输线的面积和彼此相对的第二和第三传输线的面积增加，从而提高耦合系数。 此外，由于二次传输线被分成两个区域并且使用具有比第一传输线窄的宽度的第二和第三传输线，所以可以减少在第一至第三传输线和半导体衬底之间产生的寄生电容分量。