This patent discloses a current sensor comprising a sensor bridge (14), which consists of several magnetic tunnel junction (MTJ) elements (R11, R12, R21, R22), a MTJ temperature compensation resistor (16), and a current lead (20), which are integrated onto the same chip. The current lead (20) is positioned close to the sensor bridge (14), and it is used to carry the test current (19). A permanent magnet (17) is arranged at the periphery of the MTJ temperature compensation resistor (16). The permanent magnet (17) rigidly aligns the magnetization direction (7) of the free layer of the MTJ temperature compensation resistor (16) anti-parallel to the magnetization direction (8) of a pinning layer; so that the MTJ temperature compensation resistor (16) remains in a high resistance state providing a resistance value that changes as a function of temperature. The sensor bridge (14) is connected in series with the MTJ temperature compensation resistor (16) in order to temperature compensate the sensor bridge (14). A magnetic field (21) generated by the test current (19) produces an output voltage at the output of the temperature compensated sensor bridge that is proportional to the test current value. As a result of this temperature compensated structure, the current sensor has the advantages of high sensitivity, wide linear range, low power consumption, and excellent temperature stability.