公开(公告)号：US20150091560A1

公开(公告)日：2015-04-02

申请号：US14379706

申请日：2013-02-19

Applicant: Jiangsu Multidimension Technology Co., Ltd.

Inventor： James Geza Deak ,  Insik Jin ,  Weifeng Shen ,  Songsheng Xue

IPC: G01R33/09 ,  H01L43/08

Abstract: The present invention relates to a magnetoresistive sensor for measuring a magnetic field. A calculation of the sensitivity to external magnetic fields is provided, and it is shown to be related to the shape anisotropy of the magnetoresistive sensing elements. Moreover, it is shown that sensitivity may be made highest when the shape of the magnetoresistive element is long parallel to the sensing axis, and a magnetic bias field strong enough to saturate the magnetoresistive element's magnetization, Hcross, is applied perpendicular to the sensing axis. A monolithic permanent magnet is provided to generate the Hcross and it may be applied at an angle in order to counteract non-ideal fields along the sense axis direction. The high sensitivity magnetoresistive element can be used in many electrical form-factors. Six exemplary bridge configurations are described herein.

Abstract translation: 本发明涉及用于测量磁场的磁阻传感器。 提供了对外部磁场的灵敏度的计算，并且显示与磁阻感测元件的形状各向异性有关。 此外，显示出当磁阻元件的形状长于平行于感测轴的情况下，灵敏度可能最高，并且垂直于感测轴施加足以使磁阻元件的磁化Hcross饱和的磁偏置场。 提供单片永磁体以产生Hcross，并且可以以一定角度施加单片永磁体，以抵消沿着感测轴方向的非理想场。 高灵敏度磁阻元件可用于许多电形式。 这里描述了六个示例性的桥结构。

公开(公告)号：US20140327437A1

公开(公告)日：2014-11-06

申请号：US14368299

申请日：2012-10-30

Applicant: Jiangsu Multidimension Technology Co., Ltd.

Inventor： Liansheng Han ,  Jianmin Bai ,  Wei Li ,  Songsheng Xue

IPC: G01R19/00 ,  G01R33/06

CPC classification number: G01R19/0092 ,  G01R15/205 ,  G01R17/10 ,  G01R19/32 ,  G01R33/06 ,  G01R33/098

Abstract: This patent discloses a current sensor comprising a sensor bridge (14), which consists of several magnetic tunnel junction (MTJ) elements (R11, R12, R21, R22), a MTJ temperature compensation resistor (16), and a current lead (20), which are integrated onto the same chip. The current lead (20) is positioned close to the sensor bridge (14), and it is used to carry the test current (19). A permanent magnet (17) is arranged at the periphery of the MTJ temperature compensation resistor (16). The permanent magnet (17) rigidly aligns the magnetization direction (7) of the free layer of the MTJ temperature compensation resistor (16) anti-parallel to the magnetization direction (8) of a pinning layer; so that the MTJ temperature compensation resistor (16) remains in a high resistance state providing a resistance value that changes as a function of temperature. The sensor bridge (14) is connected in series with the MTJ temperature compensation resistor (16) in order to temperature compensate the sensor bridge (14). A magnetic field (21) generated by the test current (19) produces an output voltage at the output of the temperature compensated sensor bridge that is proportional to the test current value. As a result of this temperature compensated structure, the current sensor has the advantages of high sensitivity, wide linear range, low power consumption, and excellent temperature stability.

Abstract translation: 该专利公开了一种电流传感器，包括传感器桥（14），其由若干磁性隧道结（MTJ）元件（R11，R12，R21，R22），MTJ温度补偿电阻（16）和电流引线 ），它们集成到同一个芯片上。 电流引线（20）位于传感器桥（14）附近，用于承载测试电流（19）。 永磁体（17）布置在MTJ温度补偿电阻器（16）的外围。 永磁体（17）使与MTJ温度补偿电阻器（16）的自由层的磁化方向（7）刚性对准，该磁化方向与销钉层的磁化方向（8）反平行; 使得MTJ温度补偿电阻器（16）保持在高电阻状态，提供随温度变化的电阻值。 传感器桥（14）与MTJ温度补偿电阻（16）串联连接，以便对传感器桥（14）进行温度补偿。 由测试电流（19）产生的磁场（21）在温度补偿传感器桥的输出处产生与测试电流值成比例的输出电压。 作为该温度补偿结构的结果，电流传感器具有灵敏度高，线性范围宽，功耗低，温度稳定性优异的优点。