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Invention Application
US20140328120A1 SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL 有权
系统和装置，以及编程电阻记忆体的方法

  • Patent Title: SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL
  • Patent Title (中): 系统和装置，以及编程电阻记忆体的方法
  • Application No.: US14335498
    Application Date: 2014-07-18
  • Publication No.: US20140328120A1
    Publication Date: 2014-11-06
  • Inventor: Xiaonan Chen
  • Applicant: MICRON TECHNOLOGY, INC.
  • Main IPC: G11C13/00
  • IPC: G11C13/00
SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL
Abstract:
Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions.
Abstract(Chinese):

本文公开的实施例可以涉及使用包括具有不同部分的淬火周期的编程脉冲对存储器单元进行编程。

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