发明申请
- 专利标题： ZINC OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 氧化锌溅射靶和其生产方法
-
申请号： US14305267申请日： 2014-06-16
-
公开(公告)号： US20140328747A1公开(公告)日： 2014-11-06
- 发明人: Jun YOSHIKAWA , Katsuhiro IMAI , Koichi KONDO
- 申请人： NGK INSULATORS, LTD.
- 优先权： JP2012-016456 20120130; JP2012-211222 20120925
- 主分类号： H01J37/34
- IPC分类号： H01J37/34 ; C04B35/64 ; C01G9/02 ; C04B35/453
摘要：
Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.
公开/授权文献
- US09318307B2 Zinc oxide sputtering target and method for producing same 公开/授权日：2016-04-19
信息查询
