Invention Application
- Patent Title: ETCHING METHOD AND ETCHING LIQUID USED THEREIN
- Patent Title (中): 蚀刻方法和使用的液体
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Application No.: US14337301Application Date: 2014-07-22
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Publication No.: US20140332713A1Publication Date: 2014-11-13
- Inventor: Atsushi MIZUTANI , Hisamitsu TOMEBA , Kazutaka TAKAHASHI , Tadashi INABA
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2012-013310 20120125
- Main IPC: C23F1/26
- IPC: C23F1/26 ; H05K3/06
Abstract:
An etching method having the step of: applying an etching liquid to a substrate, the etching liquid containing: a fluorine ion, a nitrogen-containing compound having at least 2 of nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate.
Information query
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