COMPOSITION, FILM, OPTICAL FILTER, SOLID IMAGE PICKUP ELEMENT, AND INFRARED SENSOR

    公开(公告)号:US20200225577A1

    公开(公告)日:2020-07-16

    申请号:US16829719

    申请日:2020-03-25

    Abstract: Provided is a composition with which a film capable of detecting infrared light with high sensitivity for use in an infrared sensor or the like can be formed. In addition, provided are a film, an optical filter, a solid image pickup element, and an infrared sensor. This composition includes: a color material that transmits infrared light and blocks visible light; a near infrared absorbing colorant; and a curable compound. In the composition, a ratio A/B of a minimum value A of an absorbance of the composition in a wavelength range of 400 to 700 nm to a maximum value B of an absorbance of the composition in a wavelength range of 1,400 to 1,500 nm is 4.5 or higher, and in a case where a film having a thickness of 1 μm is formed using the composition, the film has a maximum value of a refractive index in a wavelength range of 800 nm or longer.

    CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
    10.
    发明申请
    CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
    清洁组合物,清洁工艺和生产半导体器件的方法

    公开(公告)号:US20140135246A1

    公开(公告)日:2014-05-15

    申请号:US14158454

    申请日:2014-01-17

    Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.

    Abstract translation: 提供一种清洗方法,其包括制备含有57〜95重量%的(a成分)水,1〜40重量%的(成分b)含羟基和/或叔羟基的 羟基化合物,(组分c)有机酸和(组分d)季铵化合物,该组合物的pH为5〜10,以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤 。 还提供了一种半导体器件的制造方法,该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤,以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物, (成分a)的水,1〜40重量%的(成分b)含羟基和/或叔羟基的羟基化合物,(成分c)有机酸和(成分d)季铵 化合物,该组合物的pH为5〜10。

Patent Agency Ranking