Abstract:
A composition includes: a compound represented by Formula (1); and at least one selected from the group consisting of a curable compound and a resin. Provided are a film that is formed using the composition, an infrared cut filter, a solid image pickup element, an infrared sensor, and a camera module. Further, provided is a compound represented by Formula (1). R1 and R2 each independently represent a group represented by the following Formula (2) and having a SP value of 12.2 (cal/cm3)1/2 or higher as a whole.
Abstract:
Provided is a photo-sensitive composition capable of yielding pixels having a high translucency and a large refractive index, with a less amount of development residue in the process of formation. The photo-sensitive resin composition contains an ultraviolet absorber represented by Formula (I); a photo-polymerization initiator; and a polymerizable monomer: wherein each of R1, R2 and R3 independently represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms; one of R4 and R5 represents an electron withdrawing group, and the other of R4 and R5 represents —SO2R6, —CO2R6, —COR6, —CN or —CONR6R7; each of R6 and R7 independently represents a hydrogen atom, alkyl group having 1 to 8 carbon atoms or aryl group.
Abstract translation:提供能够产生具有高半透明度和大折射率的像素的光敏性组合物,其在形成过程中具有较少量的显影残留。 感光性树脂组合物含有式(I)所示的紫外线吸收剂。 光聚合引发剂; 和可聚合单体:其中R 1,R 2和R 3各自独立地表示氢原子或具有1至10个碳原子的烷基; R4和R5之一表示吸电子基团,R4和R5中的另一个表示-SO 2 R 6,-CO 2 R 6,-COR 6,-CN或-CONR 6 R 7; R 6和R 7各自独立地表示氢原子,碳原子数1〜8的烷基或芳基。
Abstract:
The near-infrared absorption composition includes a processed coloring agent obtained by coating a near-infrared absorption coloring agent with a resin having one or more selected from a coloring agent structure, a heterocyclic structure, and an acyclic hetero atom-containing group. The near-infrared absorption coloring agent is preferably one or more selected from a phthalocyanine coloring agent, a perylene coloring agent, a pyrrolopyrrole coloring agent, a cyanine coloring agent, a dithiol metal complex coloring agent, a naphthoquinone coloring agent, a diimmonium coloring agent, an azo coloring agent, and a squarylium coloring agent and more preferably a pyrrolopyrrole coloring agent.
Abstract:
Provided are a composition of which dispersibility of particles including a pyrrolopyrrole coloring agent is satisfactory, a method of manufacturing a composition, a curable composition, a cured film using a curable composition, a near-infrared cut filter, a solid-state imaging device, an infrared sensor, and a camera module. The composition includes particles including a coloring agent represented by Formula (1), in which an average secondary particle diameter of the particles is 500 nm or less. R1a and R1b each independently represent an alkyl group, an aryl group, or a heteroaryl group, R2 and R3 each independently represent a hydrogen atom or a substituent, R2 and R3 may be bonded to each other to form a ring, R4's each independently represent a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, —BR4AR4B, or a metal atom, R4's may form a covalent bond or a coordinate bond with at least one selected form R1a, R1b, or R3, and R4A and R4B each independently represent a hydrogen atom or a substituent.
Abstract:
Provided is a composition with which a film capable of detecting infrared light with high sensitivity for use in an infrared sensor or the like can be formed. In addition, provided are a film, an optical filter, a solid image pickup element, and an infrared sensor. This composition includes: a color material that transmits infrared light and blocks visible light; a near infrared absorbing colorant; and a curable compound. In the composition, a ratio A/B of a minimum value A of an absorbance of the composition in a wavelength range of 400 to 700 nm to a maximum value B of an absorbance of the composition in a wavelength range of 1,400 to 1,500 nm is 4.5 or higher, and in a case where a film having a thickness of 1 μm is formed using the composition, the film has a maximum value of a refractive index in a wavelength range of 800 nm or longer.
Abstract:
An etching method having the step of: applying an etching liquid to a substrate, the etching liquid containing: a fluorine ion, a nitrogen-containing compound having at least 2 of nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate.
Abstract:
A coloring photosensitive composition includes an oxime ester-based photopolymerization initiator containing a fluorine atom, a polymerizable compound having an ethylenically unsaturated double bond, an alkali-soluble resin, and a colorant, in which in a case where a film having a film thickness after drying of 2.0 μm is formed using the coloring photosensitive composition, the optical density of the film at a wavelength of 365 nm is 1.5 or more.
Abstract:
A coloring photosensitive composition includes an oxime ester-based photopolymerization initiator containing a fluorine atom, a polymerizable compound having an ethylenically unsaturated double bond, an alkali-soluble resin, and a colorant, in which in a case where a film having a film thickness after drying of 2.0 μm is formed using the coloring photosensitive composition, the optical density of the film at a wavelength of 365 nm is 1.5 or more.
Abstract:
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
Abstract:
A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.