发明申请
- 专利标题： TRENCH JUNCTION BARRIER CONTROLLED SCHOTTKY
- 专利标题（中）： TRENCH JUNCTION BARRIER控制的肖特
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申请号： US13892312申请日： 2013-05-13
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公开(公告)号： US20140332882A1公开(公告)日： 2014-11-13
- 发明人: SiK K. Lui , Anup Bhalla
- 申请人： SiK K. Lui , Anup Bhalla
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
A method for manufacturing a Schottky diode comprising steps of 1) providing a region with a dopant of a second conductivity type opposite to a first conductivity type to form a top doped region in a semiconductor substrate of said first conductivity type; 2) providing a trench through the top doped region to a predetermined depth and providing a dopant of the second conductivity type to form a bottom dopant region of the second conductivity type; and 3) lining a Schottky barrier metal layer on a sidewall of the trench at least extending from a bottom of the top doped region to a top of the bottom doped region.
公开/授权文献
- US09741851B2 Trench junction barrier controlled Schottky 公开/授权日：2017-08-22
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