Invention Application
US20140339995A1 SINGLE PIN CONTROL OF BIPOLAR JUNCTION TRANSISTOR (BJT)-BASED POWER STAGE 有权
双极型晶体管(BJT)单电源控制

SINGLE PIN CONTROL OF BIPOLAR JUNCTION TRANSISTOR (BJT)-BASED POWER STAGE
Abstract:
A power stage for light emitting diode (LED)-based light bulbs may include a bipolar junction transistor (BJT). The base of BJT switch may be biased externally and the operation of the BJT may be through a single pin to the emitter of the BJT. A controller integrated circuit (IC) may control the power stage through the main BJT's emitter pin in an emitter-controlled BJT-based power stage. The emitter-controlled BJT-based power stage may replace the conventional buck-boost power stage topology. For example, the controller may activate and deactivate a switch coupling the BJT's emitter to ground. A power supply for the controller IC may be charged from a reverse recovery of charge from the BJT, and the reverse recovery controlled by the controller IC.
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