Invention Application
- Patent Title: SINGLE PIN CONTROL OF BIPOLAR JUNCTION TRANSISTOR (BJT)-BASED POWER STAGE
- Patent Title (中): 双极型晶体管(BJT)单电源控制
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Application No.: US14280474Application Date: 2014-05-16
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Publication No.: US20140339995A1Publication Date: 2014-11-20
- Inventor: Ramin Zanbaghi , John L. Melanson , Jieyeon Choi
- Applicant: Cirrus Logic, Inc.
- Applicant Address: US TX Austin
- Assignee: Cirrus Logic, Inc.
- Current Assignee: Cirrus Logic, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H05B33/08
- IPC: H05B33/08 ; H02M3/158

Abstract:
A power stage for light emitting diode (LED)-based light bulbs may include a bipolar junction transistor (BJT). The base of BJT switch may be biased externally and the operation of the BJT may be through a single pin to the emitter of the BJT. A controller integrated circuit (IC) may control the power stage through the main BJT's emitter pin in an emitter-controlled BJT-based power stage. The emitter-controlled BJT-based power stage may replace the conventional buck-boost power stage topology. For example, the controller may activate and deactivate a switch coupling the BJT's emitter to ground. A power supply for the controller IC may be charged from a reverse recovery of charge from the BJT, and the reverse recovery controlled by the controller IC.
Public/Granted literature
- US09253833B2 Single pin control of bipolar junction transistor (BJT)-based power stage Public/Granted day:2016-02-02
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