Invention Application
US20140339999A1 CHARGE PUMP-BASED DRIVE CIRCUITRY FOR BIPOLAR JUNCTION TRANSISTOR (BJT)-BASED POWER SUPPLY
有权
双极型晶体管(BJT) - 充电电源的基于充电泵的驱动电路
- Patent Title: CHARGE PUMP-BASED DRIVE CIRCUITRY FOR BIPOLAR JUNCTION TRANSISTOR (BJT)-BASED POWER SUPPLY
- Patent Title (中): 双极型晶体管(BJT) - 充电电源的基于充电泵的驱动电路
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Application No.: US14280539Application Date: 2014-05-16
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Publication No.: US20140339999A1Publication Date: 2014-11-20
- Inventor: John L. Melanson , Ramin Zanbaghi , Jieyeon Choi , Firas Azrai , Rahul Singh , Siddharth Maru
- Applicant: Cirrus Logic, Inc.
- Applicant Address: US TX Austin
- Assignee: CIRRUS LOGIC, INC.
- Current Assignee: CIRRUS LOGIC, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H05B33/08

Abstract:
A bipolar junction transistor (BJT) may be used to generate a supply voltage for operating a controller, such as a lighting controller for a LED-based light bulb. A base of the BJT may receive current generated from the supply voltage to control operation of the BJT. Although the base of the BJT would be at a lower voltage than the emitter, a base drive circuit may be coupled between the emitter and the base of the BJT to increase the voltage. As one example, the base drive circuit may be a charge pump. In another example, the BJT may function as its own charge pump. In yet another example, a positive and a negative base current of the BJT may be independently controlled to regulate an output supply voltage VDD from the BJT.
Public/Granted literature
- US09735671B2 Charge pump-based drive circuitry for bipolar junction transistor (BJT)-based power supply Public/Granted day:2017-08-15
Information query
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