发明申请
US20140342548A1 Integrated Circuit Devices Including Interconnections Insulated by Air Gaps and Methods of Fabricating the Same
审中-公开
包括由空气间隙绝缘的互连的集成电路器件及其制造方法
- 专利标题： Integrated Circuit Devices Including Interconnections Insulated by Air Gaps and Methods of Fabricating the Same
- 专利标题（中）： 包括由空气间隙绝缘的互连的集成电路器件及其制造方法
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申请号： US14451650申请日： 2014-08-05
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公开(公告)号： US20140342548A1公开(公告)日： 2014-11-20
- 发明人: Jeeyong Kim , Hyunchul Back , Jung-Hwan Lee , Hyunmin Lee
- 申请人： Samsung Electronics Co., Ltd
- 优先权： KR10-2012-0021675 20120302
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
Semiconductor devices and methods of fabricating the same are provided. The semiconductor device may include interconnections extending in a first direction on a substrate and spaced apart from each other in a second direction perpendicular to the first direction, barrier dielectric patterns disposed on top surfaces of the interconnections, respectively, and an upper interlayer dielectric layer disposed on the interconnection. Respective air gaps are disposed between adjacent ones of the interconnections.
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