Invention Application
- Patent Title: LOW-K NITRIDE FILM AND METHOD OF MAKING
- Patent Title (中): LOW-K硝酸盐膜及其制备方法
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Application No.: US13900976Application Date: 2013-05-23
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Publication No.: US20140346648A1Publication Date: 2014-11-27
- Inventor: Huy CAO , Huang LIU , Vijayalakshmi SESHACHALAM
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A low-K nitride film and a method of making are disclosed. Embodiments include forming a nitride film on a substrate by plasma enhanced chemical vapor deposition (PECVD) and periodically fluctuating a production of radicals during the PECVD based, at least in part, on plural cycles of a radiofrequency (RF) induced plasma.
Information query
IPC分类:
