Invention Application
- Patent Title: SINGLE CHECK MEMORY DEVICES AND METHODS
- Patent Title (中): 单次检查记忆装置和方法
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Application No.: US14263736Application Date: 2014-04-28
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Publication No.: US20140351663A1Publication Date: 2014-11-27
- Inventor: Vishal Sarin , Aaron Yip , Tomoharu Tanaka
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C29/50
- IPC: G11C29/50
Abstract:
Memory devices and methods of operating memory devices are shown. Configurations described include circuits to perform a single check between programming pulses to determine a threshold voltage with respect to desired benchmark voltages. In one example, the benchmark voltages are used to change a programming speed of selected memory cells.
Public/Granted literature
- US09236146B2 Single check memory devices and methods Public/Granted day:2016-01-12
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