发明申请
US20140352607A1 Raw Material for Growth of Ingot, Method for Fabricating Raw Material for Growth of Ingot and Method for Fabricating Ingot 审中-公开
锭生长原料,锭生长用原料的制造方法及锭制造方法

  • 专利标题: Raw Material for Growth of Ingot, Method for Fabricating Raw Material for Growth of Ingot and Method for Fabricating Ingot
  • 专利标题(中): 锭生长原料,锭生长用原料的制造方法及锭制造方法
  • 申请号: US14235708
    申请日: 2012-07-26
  • 公开(公告)号: US20140352607A1
    公开(公告)日: 2014-12-04
  • 发明人: Bum Sup KimKyoung Seok Min
  • 申请人: Bum Sup KimKyoung Seok Min
  • 申请人地址: KR Seoul
  • 专利权人: LG INNOTEK CO., LTD.
  • 当前专利权人: LG INNOTEK CO., LTD.
  • 当前专利权人地址: KR Seoul
  • 优先权: KR10-2011-0075467 20110728
  • 国际申请: PCT/KR2012/005966 WO 20120726
  • 主分类号: C01B31/36
  • IPC分类号: C01B31/36 C30B29/36 C30B23/02
Raw Material for Growth of Ingot, Method for Fabricating Raw Material for Growth of Ingot and Method for Fabricating Ingot
摘要:
A raw material for growing an ingot according to the embodiment comprises an agglomerate raw material in which fine particles are agglomerated, wherein the agglomerate raw material has a granular shape. A method for fabricating a raw material for growing an ingot according to the embodiment comprises the steps of: preparing an ultrahigh-purity powder; and granulating the ultrahigh-purity powder. A method for fabricating an ingot according to the embodiment comprises the steps of: preparing a raw material; filling the raw material in a crucible; and growing a single crystal from the raw material, wherein the raw material comprises an agglomerate raw material in which fine particles are agglomerated, and the agglomerate raw material has a granular shape.
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