Invention Application
- Patent Title: THERMALLY ASSISTED MRAM WITH A MULTILAYER ENCAPSULANT FOR LOW THERMAL CONDUCTIVITY
-
Application No.: US13971518Application Date: 2013-08-20
-
Publication No.: US20140356979A1Publication Date: 2014-12-04
- Inventor: Anthony J. Annunziata , Michael C. Gaidis
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L43/12
- IPC: H01L43/12
Abstract:
A technique is provided for a thermally assisted magnetoresistive random access memory device. A magnetic tunnel junction is formed. Contact wiring having a top contact electrode and a bottom contact electrode is formed. The contact wiring provides write bias to heat the magnetic tunnel junction. A multilayer dielectric encapsulant is configured to retain the heat within the magnetic tunnel junction.
Public/Granted literature
- US09054300B2 Thermally assisted MRAM with a multilayer encapsulant for low thermal conductivity Public/Granted day:2015-06-09
Information query
IPC分类:
