Invention Application
US20140361330A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
半导体发光元件

  • Patent Title: SEMICONDUCTOR LIGHT EMITTING ELEMENT
  • Patent Title (中): 半导体发光元件
  • Application No.: US14465354
    Application Date: 2014-08-21
  • Publication No.: US20140361330A1
    Publication Date: 2014-12-11
  • Inventor: Shinya HAKUTA
  • Applicant: FUJIFILM Corporation
  • Priority: JP2012-035076 20120221
  • Main IPC: H01L33/46
  • IPC: H01L33/46 H01L33/60
SEMICONDUCTOR LIGHT EMITTING ELEMENT
Abstract:
A semiconductor light emitting element that outputs emitted light having a predetermined emitted light peak wavelength λ includes: at least a substrate; a lower distributed Bragg reflector layer provided on the substrate; and a light emitting layer provided on the lower distributed Bragg reflector layer. At least one phase changing layer having a thickness of mλ/2n (wherein n is the refractive index of the phase changing layer, and m is an integer 1 or greater) is provided within the lower distributed Bragg reflector layer.
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