发明申请
- 专利标题： RESISTIVE MEMORY CELL FABRICATION METHODS AND DEVICES
- 专利标题（中）： 电阻记忆体制备方法和装置
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申请号： US14463160申请日： 2014-08-19
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公开(公告)号： US20140363947A1公开(公告)日： 2014-12-11
- 发明人: Jun Liu , Michael P. Violette
- 申请人： Jun Liu , Michael P. Violette
- 申请人地址： US ID Boise
- 专利权人： MICRON TECNOLOGY, INC.
- 当前专利权人： MICRON TECNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are configured to evenly distribute a current with a generally hemispherical current density distribution around the first electrode.
公开/授权文献
- US09172040B2 Resistive memory cell fabrication methods and devices 公开/授权日：2015-10-27
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