Invention Application
- Patent Title: METHOD OF COLLAPSE-FREE DRYING OF HIGH ASPECT RATIO STRUCTURES
- Patent Title (中): 高纵横比结构的自由干燥方法
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Application No.: US13924314Application Date: 2013-06-21
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Publication No.: US20140373384A1Publication Date: 2014-12-25
- Inventor: Stephen M. SIRARD , Diane HYMES , Olivier B. POSTEL
- Applicant: Lam Research Corporation
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method, for drying an etched layer with a plurality of structures with etched spaces between the plurality of structures is provided. A liquid is provided within the spaces on the etched layer. The liquid is displaced with a drying solution with a solvent. Some of the solvent is removed from the drying solution to form a solid from the solution, wherein the solid at least fill half the height of the etched high aspect ratio spaces. The solid is removed.
Public/Granted literature
- US09666427B2 Method of collapse-free drying of high aspect ratio structures Public/Granted day:2017-05-30
Information query
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