发明申请
- 专利标题: METHODS FOR A PHASE-CHANGE MEMORY ARRAY
- 专利标题(中): 相变记忆阵列的方法
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申请号: US13518361申请日: 2009-12-31
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公开(公告)号: US20140376306A1公开(公告)日: 2014-12-25
- 发明人: Ferdinando Bedeschi , Claudio Resta , Marco Ferraro
- 申请人: Ferdinando Bedeschi , Claudio Resta , Marco Ferraro
- 国际申请: PCT/IT2009/000603 WO 20091231
- 主分类号: G11C13/00
- IPC分类号: G11C13/00
摘要:
Methods of operating phase-change memory arrays are described. A method includes determining a pattern to be written to a phase-change memory array and executing, according to the pattern, two or more proper reset sequences on the phase-change memory array to write the pattern to the phase-change memory array. Another method includes executing a set sequence on a phase-change memory array and performing a proper read of the phase-change memory array to obtain a pattern derived from executing the set sequence.
公开/授权文献
- US09251897B2 Methods for a phase-change memory array 公开/授权日:2016-02-02
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