Invention Application
- Patent Title: PHOTONIC INTEGRATED CIRCUIT AND FABRICATION PROCESS
- Patent Title (中): 光电集成电路和制造工艺
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Application No.: US14311496Application Date: 2014-06-23
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Publication No.: US20140376857A1Publication Date: 2014-12-25
- Inventor: Alain Chantre , Sébastien Cremer
- Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS
- Priority: FR1355991 20130624
- Main IPC: G02B6/122
- IPC: G02B6/122

Abstract:
A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide.
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