Invention Application
- Patent Title: METHOD TO FORM FINFET/TRIGATE DEVICES ON BULK SEMICONDUCTOR WAFERS
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Application No.: US14478347Application Date: 2014-09-05
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Publication No.: US20140377923A1Publication Date: 2014-12-25
- Inventor: QING LIU , JUNLI WANG
- Applicant: STMICROELECTRONICS, INC. , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/308 ; H01L29/66 ; H01L21/306 ; H01L21/02
Abstract:
A method for fabricating a finFET device having an insulating layer that insulates the fin from a substrate is described. The insulating layer can prevent leakage current that would otherwise flow through bulk semiconductor material in the substrate. The structure may be fabricated starting with a bulk semiconductor substrate, without the need for a semiconductor-on-insulator substrate. Fin structures may be formed by epitaxial growth, which can improve the uniformity of fin heights in the devices.
Public/Granted literature
- US08999815B2 Method to form finFET/trigate devices on bulk semiconductor wafers Public/Granted day:2015-04-07
Information query
IPC分类:
