发明申请
US20150001678A1 Semiconductor Devices, Methods of Manufacture Thereof, and Methods of Forming Resistors
审中-公开
半导体器件，其制造方法和形成电阻器的方法
- 专利标题： Semiconductor Devices, Methods of Manufacture Thereof, and Methods of Forming Resistors
- 专利标题（中）： 半导体器件，其制造方法和形成电阻器的方法
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申请号： US14486923申请日： 2014-09-15
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公开(公告)号： US20150001678A1公开(公告)日： 2015-01-01
- 发明人: Chia-Yu Lu , Shyue-Shyh Lin , Chin-Shan Hou , Kuo-Feng Yu , Tung-Heng Hsieh , Chih-Hung Wang , Jian-Hao Chen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L49/02
摘要：
Semiconductor devices, methods of manufacture thereof, and methods of forming resistors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a first insulating material over a workpiece, and forming a conductive chemical compound material over the first insulating material. The conductive chemical compound material is patterned to form a resistor. A second insulating material is formed over the resistor, and the second insulating material is patterned. The patterned second insulating material is filled with a conductive material to form a first contact coupled to a first end of the resistor and to form a second contact coupled to a second end of the resistor.
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