发明申请
US20150001728A1 PRE-TREATMENT METHOD FOR METAL-OXIDE REDUCTION AND DEVICE FORMED
审中-公开
用于金属氧化物还原的预处理方法和形成的装置
- 专利标题： PRE-TREATMENT METHOD FOR METAL-OXIDE REDUCTION AND DEVICE FORMED
- 专利标题（中）： 用于金属氧化物还原的预处理方法和形成的装置
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申请号： US13927570申请日： 2013-06-26
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公开(公告)号： US20150001728A1公开(公告)日： 2015-01-01
- 发明人: Li CHEN , Jyh-Nan LIN , Chin-Feng SUN , Po-Hsiung LEU , Ding-I LIU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48
摘要：
A method of forming a semiconductor device, the method includes performing, in a first module, a remote plasma treatment on a wafer to remove an oxide layer from the wafer by a reduction reaction. The method further includes transferring the pre-treated wafer from the first module to a second module under a vacuum. The method further includes forming, in the second module, an etch stop layer over the wafer.
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