Invention Application
- Patent Title: CIRCUITS FOR SEMICONDUCTOR DEVICE LEAKAGE CANCELLATION
- Patent Title (中): 用于半导体器件泄漏电路的电路
-
Application No.: US13930792Application Date: 2013-06-28
-
Publication No.: US20150002209A1Publication Date: 2015-01-01
- Inventor: Ramkumar Sivakumar
- Applicant: QUALCOMM INCORPORATED
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
One feature pertains to a circuit comprising a semiconductor leakage source device and a semiconductor leakage cancellation device that are both coupled to a signal line. The leakage source device generates a leakage current on the signal line, and the leakage cancellation device generates a leakage cancellation current on the signal line. The leakage cancellation device is sized and shaped in relation to the leakage source device such that the leakage cancellation current effectively cancels the leakage current on the signal line. Moreover, the leakage cancellation current cancels the leakage current on the signal line despite variations in at least one of process, temperature, and/or signal line voltages. In one example, the signal line is a virtual ground node of a capacitive feedback amplifier and the leakage source device is a switch between the virtual ground node and a first terminal of a feedback capacitor of the amplifier.
Information query
IPC分类: