Invention Application
- Patent Title: MICROWAVE PLASMA PROCESSING APPARATUS
- Patent Title (中): 微波等离子体加工设备
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Application No.: US14326652Application Date: 2014-07-09
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Publication No.: US20150013913A1Publication Date: 2015-01-15
- Inventor: Toshihiko IWAO , Jun YOSHIKAWA
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2013-145048 20130710
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. The dielectric window includes a first concave portion in a region corresponding to the first slot group of the antenna plate on the facing surface, and a second concave portion in a region corresponding to the second slot group of the antenna plate on the facing surface.
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