发明申请
- 专利标题： HIGH PERFORMANCE POWER CELL FOR RF POWER AMPLIFIER
- 专利标题（中）： 用于射频功率放大器的高性能电源单元
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申请号： US13937542申请日： 2013-07-09
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公开(公告)号： US20150014786A1公开(公告)日： 2015-01-15
- 发明人: JUN-DE JIN , TZU-JIN YEH , CHEWN-PU JOU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW HSIN-CHU
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW HSIN-CHU
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/66
摘要：
A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a depletion or Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the depletion or Schottky MOSFET. The source node of the enhancement MOSFET and source node of the depletion or Schottky MOSFET are connected together to form the power cell.
公开/授权文献
- US09318487B2 High performance power cell for RF power amplifier 公开/授权日：2016-04-19
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