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公开(公告)号：US20150014786A1
公开(公告)日：2015-01-15
申请号：US13937542
申请日：2013-07-09
发明人： JUN-DE JIN , TZU-JIN YEH , CHEWN-PU JOU
IPC分类号： H01L27/088 , H01L29/66
CPC分类号： H01L27/0883 , H01L21/8236 , H01L21/8238 , H01L21/823821 , H01L21/823828 , H01L21/823885 , H01L27/092 , H01L27/0922 , H01L27/095 , H01L29/0649 , H01L29/66666 , H01L29/66848 , H01L29/7827 , H01L29/812 , H03F1/223 , H03F3/213
摘要： A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a depletion or Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the depletion or Schottky MOSFET. The source node of the enhancement MOSFET and source node of the depletion or Schottky MOSFET are connected together to form the power cell.
摘要翻译： 为RF功率放大器设计的功率单元包括形成在P基板中的P阱中的增强型MOSFET和形成在相同P-基板中的N阱中的耗尽或肖特基MOSFET，其中水平或垂直通道介于 耗尽或肖特基MOSFET的源极，漏极和栅电极。 增强MOSFET的源节点和耗尽型或肖特基MOSFET的源极节点连接在一起形成功率单元。
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公开(公告)号：US20200227572A1
公开(公告)日：2020-07-16
申请号：US16834312
申请日：2020-03-30
发明人： Hsiao-Tsung YEN , YU-LING LIN , CHIN-WEI KUO , HO-HSIANG CHEN , CHEWN-PU JOU , MIN-CHIE JENG
摘要： A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating substrate. A method of manufacturing a semiconductor structure is also provided.
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公开(公告)号：US20180204958A1
公开(公告)日：2018-07-19
申请号：US15922780
申请日：2018-03-15
发明人： HSIAO-TSUNG YEN , YU-LING LIN , CHIN-WEI KUO , HO-HSIANG CHEN , CHEWN-PU JOU , MIN-CHIE JENG
CPC分类号： H01L29/94 , H01L22/34 , H01L23/481 , H01L23/585 , H01L27/0629 , H01L28/60 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating substrate. A method of manufacturing a semiconductor structure is also provided.
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