Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14167236Application Date: 2014-01-29
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Publication No.: US20150014788A1Publication Date: 2015-01-15
- Inventor: Min-Yeop Park , Leonelli Daniele , Shigenobu Maeda , Han-Su Oh , Woong-Gi Kim , Jong-Hyuk Lee , Ju-Seob Jeong
- Applicant: Min-Yeop Park , Leonelli Daniele , Shigenobu Maeda , Han-Su Oh , Woong-Gi Kim , Jong-Hyuk Lee , Ju-Seob Jeong
- Priority: KR10-2013-0082307 20130712
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device includes a gate on a substrate, a gate insulating layer along a sidewall and a bottom surface of the gate, and an L-shaped spacer structure on both sidewalls of the gate. A structure extends the distance between the gate and source/drain regions to either side of the gate.
Public/Granted literature
- US09831240B2 Elevated source drain semiconductor device with L-shaped spacers and fabricating method thereof Public/Granted day:2017-11-28
Information query
IPC分类:
