Invention Application
- Patent Title: SEMICONDUCTOR DEVICE, AND A METHOD OF IMPROVING BREAKDOWN VOLTAGE OF A SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件和改进半导体器件的突变电压的方法
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Application No.: US13939556Application Date: 2013-07-11
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Publication No.: US20150014791A1Publication Date: 2015-01-15
- Inventor: Edward John Coyne , Breandan Pol Og O hAnnaidh , Seamus P. Whiston , William Allan Lane , Donal P. McAuliffe
- Applicant: ANALOG DEVICES TECHNOLOGY
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.
Public/Granted literature
- US09252260B2 Semiconductor device, and a method of improving breakdown voltage of a semiconductor device Public/Granted day:2016-02-02
Information query
IPC分类:
