公开(公告)号：US20150014791A1

公开(公告)日：2015-01-15

申请号：US13939556

申请日：2013-07-11

Applicant: ANALOG DEVICES TECHNOLOGY

Inventor： Edward John Coyne ,  Breandan Pol Og O hAnnaidh ,  Seamus P. Whiston ,  William Allan Lane ,  Donal P. McAuliffe

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/66477 ,  H01L29/66681 ,  H01L29/7824

Abstract: A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.

Abstract translation: 一种半导体器件，其具有与半导体层相邻的第一层，并且还包括至少一个场修改结构，其定位使得在使用中，场修改结构处的电位在半导体的界面区域处引起E场矢量 和要修改的第一层。