发明申请
- 专利标题: BACKSCATTERING FOR LOCALIZED ANNEALING
- 专利标题(中): 用于本地化退火的背板
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申请号: US13945746申请日: 2013-07-18
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公开(公告)号: US20150021746A1公开(公告)日: 2015-01-22
- 发明人: Nirmal David Theodore
- 申请人: Nirmal David Theodore
- 申请人地址: US TX Austin
- 专利权人: FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人: FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址: US TX Austin
- 主分类号: H01L29/02
- IPC分类号: H01L29/02 ; H01L21/22
摘要:
A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive of the radiation, and positioned such that the backscatter layer inhibits exposure of the wafer to the radiation apart from the active layer.
公开/授权文献
- US09153644B2 Backscattering for localized annealing 公开/授权日:2015-10-06
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