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1.发明授权Method for damage avoidance in transferring an ultra-thin layer of crystalline material with high crystalline quality 有权用于转移具有高结晶质量的超薄结晶材料层的损伤避免方法公开(公告)号：US07736996B2
公开(公告)日：2010-06-15
申请号：US11554847
申请日：2006-10-31
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A method for damage avoidance in transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.
摘要翻译： 将单晶薄层从第一衬底转移到第二衬底上的避免损伤的方法包括外延生长具有埋在单晶薄层之下的应变外延层的夹层结构，以及单晶薄层的剥离和转移 结合氢的引入，可以在埋层应变层内进行裂开控制。
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公开(公告)号：US09288848B2
公开(公告)日：2016-03-15
申请号：US14144720
申请日：2013-12-31
CPC分类号： H05B6/6491 , H01L21/67115
摘要： A method for fabricating an apparatus using radiation annealing includes forming an annealable layer on a substrate. A radiation absorbing layer is also formed on the substrate, wherein the radiation absorbing layer heats up In response to radiation, and the radiation absorbing layer is formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the apparatus. Radiation is directed toward the apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer.
摘要翻译： 使用辐射退火的装置的制造方法包括在基板上形成可退火层。 辐射吸收层也形成在衬底上，其中辐射吸收层响应于辐射而加热，并且辐射吸收层形成在邻近可退火层的至少一部分并且不邻近设备的一部分 。 辐射被引向该装置以加热该辐射吸收层，以使与该辐射吸收层相邻的该可退火层的至少一部分退火，而不使该设备的与辐射吸收层不相邻的部分退火。
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公开(公告)号：US09153644B2
公开(公告)日：2015-10-06
申请号：US13945746
申请日：2013-07-18
CPC分类号： H01L29/02 , H01L21/22 , H01L21/2686 , H01L21/324 , H01L29/36
摘要： A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive of the radiation, and positioned such that the backscatter layer inhibits exposure of the wafer to the radiation apart from the active layer.
摘要翻译： 制造电子设备的方法包括在晶片上形成有源层，在晶片上形成反向散射层，并将辐射引向晶片以退火有源层。 后向散射层对于辐射不透明，比辐射的吸收更反射，并且被定位成使得后向散射层禁止晶片暴露于远离有源层的辐射。
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公开(公告)号：US20150182995A1
公开(公告)日：2015-07-02
申请号：US14144720
申请日：2013-12-31
CPC分类号： H05B6/6491 , H01L21/67115
摘要： A method for fabricating an apparatus using radiation annealing includes forming an annealable layer on a substrate. A radiation absorbing layer is also formed on the substrate, wherein the radiation absorbing layer heats up In response to radiation, and the radiation absorbing layer is formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the apparatus. Radiation is directed toward the apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer.
摘要翻译： 使用辐射退火的装置的制造方法包括在基板上形成可退火层。 辐射吸收层也形成在衬底上，其中辐射吸收层响应于辐射而加热，并且辐射吸收层形成在邻近可退火层的至少一部分并且不邻近设备的一部分 。 辐射被引向该装置以加热该辐射吸收层，以使与该辐射吸收层相邻的该可退火层的至少一部分退火，而不使该设备的与辐射吸收层不相邻的部分退火。
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公开(公告)号：US20150021746A1
公开(公告)日：2015-01-22
申请号：US13945746
申请日：2013-07-18
CPC分类号： H01L29/02 , H01L21/22 , H01L21/2686 , H01L21/324 , H01L29/36
摘要： A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive of the radiation, and positioned such that the backscatter layer inhibits exposure of the wafer to the radiation apart from the active layer.
摘要翻译： 制造电子设备的方法包括在晶片上形成有源层，在晶片上形成反向散射层，并将辐射引向晶片以退火有源层。 后向散射层对于辐射不透明，比辐射的吸收更反射，并且被定位成使得后向散射层禁止晶片暴露于远离有源层的辐射。
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